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杂质吸除技术与高效硅太阳电池
The Technique of Absorbing Impurities and High—efficiency Silicon Solar Cell
【摘要】 应用杂质吸除技术,以1Ω—cm P型Φ60mm复拉单晶硅制作N+—p—p+铝背场太阳电池,在AM1.5条件下,全面积光电转换效率在10%以上(有效面积光电转换效率为12%)的太阳电池占90%,最高可达14%(有效面积光电转换效率为16.2%)。在P+—N—N+型太阳电池上获得相同的结果。
【Abstract】 Utilizing the technique of absorbing impurities, we can manufacture N~+—P—P~+Aluminium back—suface—field solar cell from φ60mm duplicate P—type singler erystal, 1Ω-cm. In AM1.5 conditions, the solar cell, of which the tolar-area photo-electric conversion efficiency surpassing 10 percent, is 90 percent (the effective-area photo-electric conversion efficiency is over 12 percent); at most it can reach 14 percent (the effective—area efficiency is 16.2 percent). The same result can be obtained in the type P~+—N—N~+ solar cell.
- 【文献出处】 内蒙古大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Neimongol , 编辑部邮箱 ,1983年02期
- 【被引频次】1
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