【摘要】 本文主要叙述超纯P型硅探测器的制备和性能。应用浙江大学研制的超纯硅单晶制成50mm²×1.5mm的Si（Hp）探测器,在室温10℃,对²⁷⁰Bi 481.6keV和976keV内转换电子的能量分辨率分别为6.3keV和8.58keV;对¹³⁷Cs624keV内转换电子能量分辨率为7.1keV。更多还原

【Abstract】 The fabrication and characteristics of a 50mm2 × 1.5mm Si(Hp) detector are described in this paper. The detector was made of single crystal of ultra-high purity silicon, which was supplied by Zhejiang University. At room temperature 10℃, the energy resolution of the detector in 6.3keV and 8.58keV for 207Bi 481.6keV and 976keV internal conversion electron respectively, and 7.1keV for 137Cs 625keV internal conversion electron.更多还原