【摘要】 选择Li₂O—V₂O₅作为助熔剂,在870℃的外延温度下,成功地外延生长了掺Ag的LiN_bO₃单晶薄膜。直接的和用光学显微镜观察表明薄膜表面是光滑平整和透明的;电子显微镜照片显示出基片和薄膜的界面十分明显;X—射线衍射曲线给出明显分开的基片与薄膜衍射峰证实了薄膜具有极好单晶性。利用生长的薄膜作了光波导试验,耦合出了TE模。更多还原

【Abstract】 The technology of the liquid Phase epitaxy of LiNbO3 thin film doped with Agis described in detail.The LiNbO₃ thin films doped with Ag have been grown succe-ssfully at 870℃by selecting Li₂O-V₂O₅ system as flux.Direct and optical microscopicobservations show that the films are smooth,flat,and transparent;The photographyof the sweep electron microscope demonstrates that the boundary between film andsubstrate is very sharp;The peaks of the x-ray diffraction from the film and thesubstrate are well separeted.The Charateristic feature indicated that films have a highsingle crystellinity with good epitaxy.Using the film grown with this technology,we have carried out the experiment of optical Wave-guide,coupling-out TE mode.更多还原