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隐埋波导耦合GaAs/(GaAl)As纵模可控集成激光器

Channel-substrate planar-stripe GaAs/(GaAl) As integrated lasers with a buried output waveguide

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【作者】 潘慧珍; 徐国华; 肖宗耀; 程宗权; 沈彭年; 富小妹; 王惠民;

【Author】 PAN HUIZHEN XU GUOHUA XIAO ZONGTAO CHEN ZONGQUAN SHEN PENGNIAN FU XIAOMEI WANG HUIMIN(Shanghai Institute of Metallurgy, Academia Sinica)

【机构】 中国科学院上海冶金研究所; 中国科学院上海冶金研究所;

【摘要】 本文报告一种带输出波导的沟道条形集成激光器的设计、制作和测量结果.通过沟道内的凸透镜型两维无源波导,使两个激光器的光辐射相互耦合注入进行选频放大,从而获得单纵模激光输出.

【Abstract】 In order to develop single mode fiber optical communication, an integrated channel-substrate planar-stripe GaAs/(GaAl)As laser coupled with a two dimensional waveguide was designed and fabricated.The waveguide structure of the integrated device was designed on the base of evanescent field coupling, and the optical parameters including the refractive index and the thickness for each layer were estimated from the numerical solution of the eigenvalue equation for three and four layer slab waveguide. A reversed p-n junction was adopted for current confinement.The device was fabricated from an epitaxial wafer grown by liquid phase epitaxy on a channelled substrate with the desired layers, compositions, and carrier concentrations.Selective chemical etching and conventional device technology were used to fabricate the twin-laser with the two dimensional convex waveguide buried in the channel.Mode selection and amplification due to optical injection was demonstrated from the spectrum measurement, and single longitudinal mode oscillation was achieved by suitable adjusting the synchronous pulse currents applied on the both active regions.Finally, the longitudinal mode selectivity and the relation of the active layer thickness to the mode power transfer efficiency and threshold current density are discussed.

  • 【文献出处】 光学学报 ,Acta Optica Sinica , 编辑部邮箱 ,1983年09期
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