【摘要】 在改变MS结势垒区宽度的同时,我们测量了在ZnSe:Mn²⁺晶体、ZnS:Er³⁺和ZnS:Sm³⁺薄膜中的Mn²⁺、RE³⁺特征谱的电致发光衰减。测量了高阻和低阻ZnS:Mn²⁺在变化温度（77K—500K）时,Mn²⁺发光强度的改变。认为在室温以下,Mn²⁺和RE³⁺在低阻ZnS和ZnSe中的辐射跃迁均受到Auger猝灭的影响。更多还原

【Abstract】 Auger quenching of radiative transitions of Mn2+ ions and RE3 + ions in ZnS and ZnSe has been investigated by studies of decay curves of electroluminescence of Mn2+ ions and RE3 + ions and thermal quenching of their photoluminescenceDecay curves of electroluminescence of ZnSe:Mn2 + diodes, ZnS:Er3+ thin films and ZnS:Sm3+ thin films were measured under pulsed voltage as shown in Fig. 1. Excitation voltage is reverse pulse(Vp+ VB).After excitation pulse a constant bias VB is maintained. Decay curves of electroluminescence of Mn2 + ions and RE3+ ions in the samples all consist of a fast components and a slow exponential components.The decay times of the slow components vary neither with the height of excitation pulse Vp nor with the bias VB applied to the samples during decay. Decay times of slow components of electroluminescence of Mn2 + ions in ZnSe are 180~200μs which are consistent with decay times of photolumi-nescence of Mn2+ ions in high resistivity ZnSe crystals.The ratio of the intensity cf the slow component to the total intensity increases with reverse bias VB. It is found thatwhere VD is the height of junction barrier without applied voltage.The above phenomena are explained by assuming Auger quenching of radiative transitions of Mn2+ ions and RE3+ ions.When excitation pulse is applied the Mn2+ ions within the barrier are excited. The width of the barrier is proportional to Vp+VB+VD . When excitation pulse is turned off the width of the barrier is proportional to VB + VB. The excited Mn2 + ions outside the barrier return to the ground states nonradiatively, giving their energy to nearby electrons in the conduction band-Auger quenching effect, they produce the fast decay components. Since there are not many electrons within the barrier the excited Mn2+ ions inside the barrier are not affected by Auger effect and they give exponential slow components. The ratio cf the intensity cf the slow component to the total intensity is propor-to the proportion of the excited Mn2+ icns inside the barrier during decayand hence proportional toFhotoluminescence cf Mn2+ ions and Sm3+ ions in ZnS at different temperatures was measured. Quenching cf low resistivity samples begins at lower temperature comparing with high resistivity samples. The curves fit the formulaThe activation energy AE of thermal quenching of Mn2 + ions in high resistivity ZnS is 0.33eV. AE for Mn2+ ions in low resistivity ZnS is 0.23eV. Different AE imply different quenching mechanizms. AE of 0.23eV of low resistivity ZnS:Mn2+ is nearly equal to the repo.ted depth of 0.2eV of donor levels in low resistivity ZnS. It supports the assumption of Auger quenching of radiative transitions of Mn2+ ions and RE3+ ions in low resistivity samples.更多还原