【摘要】 在不同场强和照度下,测量了一系列夹心结构α-Si∶H膜的光电导响应曲线,发现在较弱场强下,上升曲线和下降曲线有反常现象。作者分析了光电导响应曲线,指出无论是上升曲线还是下降曲线,都可以分解为由两个变化过程组成:一个“尖形”和一个“类指数形”。通过对零场和极弱场强响应的研究,表明上述现象可用光照或停止光照后空间电荷分布的变化来解释。本文对具有低迁移率和高电阻率的光敏材料具有普遍的意义。更多还原

【Abstract】 A series of curves of the photoconduction response under different field strengths and different degrees of illtimination has been measured and investigated. It is found that the rise and decay curves are abnormal under weaker fields. Analysis of these curves of photoconduction response shows that either rise curves or decay curves are composed of a spike-like and a quasi-exponential form. Considering the above fact, we suggest that these pheno-mena are due to the changes of distribution of the space charges in a-Si:H films, when illu-mination turns on or off. It is felt that this paper is of universal significance for photosen-sitive materials with low mobilities and high resistivity.更多还原