【摘要】 本文介绍了单片X波段GaAs MESFET振荡器的研究结果,阐明了计算GaAs MES FET三端口S参数以及用此参数设计单片振荡器的方法,给出了单片振荡器的制造技术及测试结果;10.3GHz时输出30mW;8.2GHz时输出40mW,效率15％。更多还原

【Abstract】 This paper presents research results of X band monolithic GaAs MESFET oscillators and describes the methods used to derive GaAs MESFET 3-port S-parameters and to design monolithic oscillators with these S-parameters. A technique used for realizing the monolithic oscillators is proposed and the measured results are as follows: 30 mW output power at 10. 3 GHz, and 40 mW at 8. 2GHz with the efficiency of 15%更多还原