【摘要】 当激光功率、束斑直径和硅片预热温度一定时,存在一临界扫描速度。当激光扫描速度小于此临界位时,CW CO₂激光退火具有和热退火相同的载流子浓度、方块电阻、折射率、消光系数和反射率,但激光退火后少子扩散长度要比热退火的大几倍。更多还原

【Abstract】 The implanted silicon wafer is annealed by the scanning CW CO2 laser. The square resistance. Hall coefficient, elliptic’ally polarized parameters and diffusion length of minority carriers are measured after laser annealing. There is a critical scanning speed for given laser power, diameter of beam and preheated temperature of wafer. Blow the scanning speed, the electrical and optical parameter are as same as that after furnace annealing, but the diffusion length of substrate is several times as long as that after furnace annealing.更多还原