【摘要】 本文继续研究了LSI常用的p型CZ硅单晶经700℃热处理后产生的新施主。在n型样品中,同样观察到新施主,其性质与p型的相同,但生成率和浓度较p型的低。新施主与热施主有密切关系,在300～800℃间预热处理都可以促进新施主的产生,其中450℃预热处理的促进作用最大。大于800℃预热处理则减少新施主的产生。新施主比热施主稳定,经1050℃、30小时的热处理,浓度约为1.33×10¹⁵cm^-3的新施主只消除了68％。本文还较详细地讨论了新施主的本质和产生机理。更多还原

【Abstract】 This is the second part of our discussion on the new donor generated in p-type CZ-Si commonly used for LSI manufacture after annealing at 700℃. In n-type CZ-Si, the new donor can also be observed and its properties are the same as in p-type Si,but its gene-ration rate and concentration are both lower than that in p-type Si. The new donor is proved to be closely correlated with the thermal donor.The preannealing in the temperature range from 300℃-800℃ can promote the new donor generation with 450℃ being the most effective temperature.However,the preannealing at the temperature above 800℃ would decrease the new donor generation. The new donor is more stable than the thermal donor. Only 68% of the new donor is eliminated after annealing at 1050℃ for 30 hours in the sample containing the new donor of 1.33 × 1016cm-3. The nature and generation of the new donor are also discussed in detail.更多还原