【摘要】 本工作研究了仅改变基片温度而其它条件不变的溅射Nb₃Ge膜的性能.通过对样品的Tc、H_c2（T）、R（T）的测量,给出在一定条件下基片温度与溅射Nb₃Ge膜的Tc及H_C2（0）的关系.发现:存在一生成高Tc、高H_c2（0） Nb₃Ge薄膜的最佳温区（800—810℃）;△Tc随磁场增加而展宽;溅射Nb₃Ge膜的电阻率ρ（T）在Tc（?）T<65K温区中服从:ρ（T）=α+bT²规律,且与基片温度无关.更多还原

【Abstract】 We have,in this paper,investigated the properties of Nb3Ge films sputtered at varying substrate temperatures with the other conditions remaining the same.The Tc,HCi and R(T) have been measured,showing the relation between Tc substrate temperature and Ha (O).It is shown that there is the best substrate temperature range (800-810℃) for growing hikh-Tc,high-Hc2 (O) Nb3Ge Film,and that the transition width ΔTc of all the samples tends to broaden with the increasing applied field.It is also shown that resistivities of all the films obey the rule p(T)=a+bT2 in the temperature range Tc< T<65K,even at different substrate temperatures.更多还原