【摘要】 用高温石墨作为红外辐射源,对高浓度的注砷硅进行了瞬态（13 秒）辐照,达到非常好的退火效果.对于10¹⁶cm^-2剂量的注砷硅可达到100％的电激活,且损伤恢复比热退火（1100℃,30分）情况要好,引起的注入原子的再分布比常规的高温热退火要小得多.用本方法退火的注砷硅PN结具有良好的电特性。因此,在 VLSI工艺中它是一种很有应用前景的离子注入退火技术.更多还原

【Abstract】 High-dose (10¹⁶cm^-2)As⁺-implanted silicon wafers are irradiated transiently using aRF heated graphite as an infrared irradiation source.Satisfactory results are obtained:theelectrical activation of the dopants is 100% complete.In contrast with the conventional fur-nace annealing,better recovery of the implantation damage is obtained and the dopant re-distribution is weakened greatly,P-N junctions annealed in this way show good electricalcharacteristics.It is believed that the IR annealing has a good prospect in the applicationof VLSI.更多还原