【摘要】 掺Fe半绝缘 InP材料室温下注入Si⁺,在 650℃无包封退火15 min,辐射损伤已可消除;但是Si的充分电激活则需要较高的退火温度.无包封下即使在 750℃退火 30 min,样品表面貌相也未被破坏.用能量E=150keV注入Si⁺、剂量φ为1× 10¹³、5 × 10¹³和1×10¹⁴cm^-2的样品.在750℃无包封退火15min,最高载流子浓度n_s分别是8×10¹³、3.9×10¹³和 6.3 ×10¹³cm^-2,其中φ为 1×10¹³cm^-2的样品,霍耳迁移率μ_n为 2100 cm²/V·scc.更多还原

【Abstract】 The radiation damage created by Si⁺ implantation into Fe-doped semi-insulating InPat room temperature has been annealed out after capless annealing at 650℃ for 15 rain, butsufficient electrical activation of implanted Si requires higher annealing temperature.Thesurface quality of InP samples annealed at 750℃ C for 30 min still shows well.The maximumsheet carrier concentrations for InP wafers implanted at 150 keV with 1×10¹³,5×10¹³and1×10¹⁴cm^-2 and capless annealed at 750℃ for 15 min are 8×10¹²,3.9×10¹³ and 6.3×10¹³cm¹² respectively.The n-type InP Hall mobility implanted with 1×10¹³ cm^-2 of Si⁺ at 150keV is 2100 cm²/V, sec.更多还原