【摘要】 本文采用TEM和阳极腐蚀法、化学腐蚀法,研究了原生掺Si砷化镓单晶中的微缺陷及其行为;并确定了这些缺陷的性质.结果表明,在掺Si砷化镓晶体中,当其电子浓度n≥3 ×10¹⁵cm^-3时,微缺陷才出现.从微观完整性言,Si是GaAs的N型掺杂剂中较好的一种.更多还原

【Abstract】 Microdefects and their behavior in as-grown Si-doped GaAs single crystals have beeninvestigated using TEM together with anodic and chemical etching methods,and the natu-re of these defects have been determined.Results show that microdefects in Si-doped GaAscrystals only occur when the electron concentration is higher than 3×10¹⁸cm^-3.In respectof microperfection,Si is better than other N-type dopants.更多还原