【摘要】 本文提出了一个关于 GaAs FET’s的新的分析模型。与传统的一维“肖克来模型”不同,这个模型从一个新的概念——“非线性可变沟道电阻”出发来分析器件的工作机理.它不仅考虑了砷化镓材料的具有一段负微分迁移率区域的速度场特性,而且考虑了一些实际影响器件性能的因素,如有效的衬底电阻、载流子浓度与迁移率乘积在有源层内的分布等.此外,它还利用了一些二维数值分析的结果.更多还原

【Abstract】 A new analytical model for GaAs FET’s is presented,and being different from thetraditional 1D Shockley model, it analyses the operational mechanism of the device froma new concept-"nonlinear channel variable resistance".It takes into account somepractical factors which influence device performences,such as the effective substrate re-sistance,distribution of the product of carrier concentration and mobility in the activelayer, etc.,as well as the effect of GaAs v-E characteristics showing NDM.In addition,this model makes use of some results of 2D numerical simulation.更多还原