【摘要】 本文用剥层椭偏光法对As离子注入硅的热退火过程作了较详细的研究.As 离子注入剂量为 5 ×10¹⁴cm^-2,能量为100keV.在300-800℃之间各种不同温度下退火,得到了在这几种温度下固相外延平均速率及复折射率分布的变化.我们发现在各种温度下非晶层的消光系数都变小,尾部的折射率变大.更多还原

【Abstract】 The thermal annealing processes of As ion-implanted Si have been studied throughthe ellipsometric method proposed by the authers in 1981.The dose of As ion is 5×10¹⁴cm^-2,the implanted energy is 100 keV.The samples are annealed under the tempera-tures ranging from 300-800℃.It has been found that the average epitaxial rate ofthe thermal annealing increases sharply with the temperature,and that the coefficientk of the amorphous layer drops down from the normal value 0.66 to 0.37-0.39;andthat the refractive index n of the tail portion of the n curve rises from 4.58 to 4.65.更多还原