【摘要】 利用DLTS证实,经染料脉冲激光退火,红宝石脉冲激光退火和连续Nd:YAG激光退火的硅样品,存在深中心缺陷能级:（Ev + 0.14eV）,（Ev + 0.19eV）,（Ev + 0.24eV）.研究了各种不同的技术以便钝化/消除这些深中心缺陷,其中包括高纯氢、氩气氛下退火,氢等离子体退火和连续CO₂激光退火.实验证明,采用连续CO₂激光退火是较合适的.关于这些深中心缺陷的钝化/消除机理,也进行了讨论.更多还原

【Abstract】 Deep point defect center levels （E_v+0.14eV）, （E_v+0.19eV）, （E_v+0.24 eV）, havebeen observed using DLTS in silicon annealed by pulse dye laser,pulse ruby laser andCW Nd: YAG laser.A variety of techniques including hydrogen plasma treatment,heattreatment in high purity argon,hydrogen ambient and CW CO₂ laser annealing have beenstudied in order to passivate/annihilate these deep point defect centers.It has beenshown that CW CO₂ laser annealing is more suitable for the purpose of passivating/annihilating deep point defect centers produced by various kinds of laser annealing.Themechanism of passivating/annihilating deep point defect centers has also been discussed.更多还原