节点文献
硅中激光退火点缺陷的钝化/消除
Passivation/Annihilation of Point Defects Produced by Laser Annealing in Silicon
【摘要】 利用DLTS证实,经染料脉冲激光退火,红宝石脉冲激光退火和连续Nd:YAG激光退火的硅样品,存在深中心缺陷能级:（Ev + 0.14eV）,（Ev + 0.19eV）,（Ev + 0.24eV）.研究了各种不同的技术以便钝化/消除这些深中心缺陷,其中包括高纯氢、氩气氛下退火,氢等离子体退火和连续CO2激光退火.实验证明,采用连续CO2激光退火是较合适的.关于这些深中心缺陷的钝化/消除机理,也进行了讨论.
【Abstract】 Deep point defect center levels （Ev+0.14eV）, （Ev+0.19eV）, （Ev+0.24 eV）, havebeen observed using DLTS in silicon annealed by pulse dye laser,pulse ruby laser andCW Nd: YAG laser.A variety of techniques including hydrogen plasma treatment,heattreatment in high purity argon,hydrogen ambient and CW CO2 laser annealing have beenstudied in order to passivate/annihilate these deep point defect centers.It has beenshown that CW CO2 laser annealing is more suitable for the purpose of passivating/annihilating deep point defect centers produced by various kinds of laser annealing.Themechanism of passivating/annihilating deep point defect centers has also been discussed.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年05期
- 【被引频次】8
- 【下载频次】127