【摘要】 本文在分析线性扫描电压下MOS电容的C-t瞬态响应基础上,提出了一种直接由测量得到的非饱和C-t曲线确定体产生寿命和表面产生速度的新方法.该方法尤其适用于长寿命测量.所测结果与阶跃电压法和饱和电容法相符.更多还原

【Abstract】 A new method for determining the bulk generation lifetime and surface generationvelocity is presented on the basis of the analysis of a MOS capacitance C-t transient re-sponse to a linear voltage sweep.The time required for measuring non-saturation C-tcurves can be relatively shortened through increasing the voltage sweep rate,thereforethis method is more suitable to measure samples in which the lifetime of the minoritycarriers is long.The measurements have been made by applying this method on severalsamples,and a comparison has been done with those taken by voltage step method andby saturation capacitance method.更多还原