【摘要】 用Q-t,TVS,C-V和TSIC方法研究了HCl氧化物MOS结构中的钠离子纯化和陷阱能量分布.在含有很干燥的 0-10％ HCl的氧气氛中进行硅的热氧化,温度 1160℃,时间35分钟,然后制成MOS结构.当钠的沾污范围为10¹¹到2.5 ×10¹⁵离子/厘米²时,大于4％的HCl氧化物的钝化效率为 99.5％到 99.99％。在 HCl MOS结构的硅边有两种陷阱态:带电态和中性态,中性态的陷阱能量依赖于HCl的浓度和BTS处理时的温度和电场强度.更多还原

【Abstract】 The process of sodium ion passivation and Na⁺ trap energy distribution in a MOS structure with HCl oxide are studied by means of Q-t,TVS, C-V and TSICmethods.The HCl oxides were thermally grown in an oxygen atmosphere containing0-10% very dry HCl gas at 1160℃ for 35 minutes.It is found that passivation effi-ciencies of these MOS structures with 4% HCl oxides generally exceed 99.5% to99.99% at the Na⁺ contamination range of 10¹¹ to 2.5×10¹⁵ ions/cm2.In the siliconside of HCl MOS structure,there are two kinds of traps,the charged state and theneutral state.The trap energy of the neutral state is dependent on the HCl concen-tration in oxygen atmosphere and on the temperature and field strength of BTS treat-ments.更多还原