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重结硅光电二极管

A Double-Junction Silicon Photodiode

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【作者】 尹长松朱德光石端云赵有伦胡淑纯

【Author】 Yin Changsong/Department of Physics, Wuhan University Zhu Deguang/Department of Physics, Wuhan University Shi Duanyun/Department of Physics, Wuhan University Zhao Youlun/Department of Physics, Wuhan UniversityHu Suchun/Department of Physics, Wuhan University

【机构】 武汉大学物理系武汉大学物理系

【摘要】 本文提出了一种重结光电二极管结构.这种结构由一个接近表面的浅结和一个较深的结组成,这两个结可以分别有效地收集产生在接近表面的和产生在体内的光生载流子,这对于提高光电二极管从短波长到长波长光的响应都是有利的.通过对所作实验样品的光谱响应灵敏度的测量,说明重结光电二极管结构对改善光电器件的光谱响应是有效的.

【Abstract】 A double-junction structure of photodiode is proposed.The structure is comprised of a shallow junction near the surface of the diode and a deep junction in the diode.Both shallow and deep junctions can effectively receive carriers generated by lightnear the surface and in the bulk of the diode,respectively.It is very advantageousfor the photodiode to response to the light from short to long wave length.Usingsingle crystal and epitaxial wafer of silicon,samples are made and their response sen-sitivity is measured.The results demonstrate that the double-junction structure is veryuseful for improving the spectrum response of the photodiode.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年03期
  • 【被引频次】2
  • 【下载频次】33
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