【摘要】 在测量磁阻振荡的直流法中,加一级差分放大,可显著提高分辨振荡峰的本领,因而可以用较低的磁场研究电子浓度为 10¹⁵cm^-3数量级的 n-InSb的磁阻振荡.这一方法适用于纵向磁阻振荡的研究.在液氦温度到10K的范围内,测量了四个n-InSb样品.从振荡频率得到载流子浓度,与霍尔效应的结果相符.从振荡峰的幅度-温度关系得到导带底的电子有效质量m^*=0.0137m_o. 从振荡峰与温度及外加电场的变化关系中,可求得样品的 Dingle温度及过热电子温度.在4.2K-7.2K温度范围内Dingle温度不变.在实验所用的电场下过热电子温度可达到14K.更多还原

【Abstract】 The resolving power can be improved in measurements of the Shubnikov-de Haas effect by adding one stage of differential amplifier to the ordinary DC techniques.This method,especially suitable for the studies of longitudial S-dH effect, is developedand applied to n-InSb.Four samples of n-InSb with carrier concentration of an orderof 10¹⁵cm^-3 are measured in a 4.2-10 K temperature range and rather low magneticfield.The Carrier concentration deduced from oscillating frequencies is essentially inagreement with that from Hall coefficients.The electron effective mass can be derivedfrom the dependence of amplitude of oscillating peak on temperature,the value forthe bottom of conduction band is m₀^* =0.0137m₀. Dingle temperature and hot elec-tron temperature are also deduced in these studies.更多还原