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利用离子注入硅及Nd:YAG连续激光退火制备厘米波段雪崩管

Fabrication of Centimeter Wave Impatt Diode Using Implanted Silicon and CW Nd: YAG Laser Annealing

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【Author】 Zhu Meifang/Graduate School, University of Science & Technology of ChinaYao Decheng/Graduate School, University of Science & Technology of ChinaLiu Shixing/Graduate School, University of Science & Technology of ChinaShi Wanquan/Graduate School, University of Science & Technology of ChinaYang Lihua Institute of Semiconductors,Ministry of Post & Telecommunication)

【机构】中国科技大学研究生院；邮电部半导体研究所；

【摘要】采用离子注入硅及Nd:YAG连续激光退火制备厘米波P~+nn~+结构雪崩二极管.器件输出功率达1.25W,效率达7.7％.与热退火工艺结果进行比较.讨论了将连续激光退火用于制备毫米波雪崩管的有利方面.更多还原

【Abstract】 Centimeter wave IMPATT diode with p~+nn~+ structure has been manufactured byusing Nd:YAG CW laser to anneal B~+ implanted Silicon. The diode’s output poweris 1.25 W and it’s effeciency reaches 7.7%. Comparison is made between the resultsof the laser annealing and those of the thermal annealing. The application of CWlaser annealing in making millimeter wave IMPATT diode is discussed.更多还原

【关键词】激光退火； Nd:YAG；雪崩二极管；退火工艺；子注；输出功率；离子注入；外延生长；突变结；样管；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年02期

【被引频次】1
【下载频次】19

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