【摘要】 在115.2K到162.3K的温度范围内,用电容瞬态技术研究了P-N结电场对硅中金施主中心空穴热发射率的影响.测量结果表明电场对热发射率有很强的增强作用,这种作用强烈地依赖于温度.用电场降低极化势垒效应可以解释这种作用.极化势垒的形式为V（r）=-Ar^-4,实验定出上述温度范围的A从8.8 × 10^-27变到1.1×10^-27eVcm⁴.在测量方法方面,首次考虑了空间电荷区边界层对热发射率-电场关系测量结果的影响,提出了修正这种影响的具体方法.更多还原

【Abstract】 In the temperature range from 115.2 K to 162.3 K, the electric field effect onthe thermal emission rate of holes trapped at gold donor center in silicon P-N junctionhas been studied using the capacitance transient technique.The results obtainedshow that the electric field in the junction has great influence on the thermal emis-sion rate.This influence depends strongly on the temperature.This can be explain-ed by the lowering of the polarization potential barrier caused by the strong electricfield in the junction.The form of polarization barrier is V（r）=-Ar^-4.In the abovementioned temperature range A is from 8.8×10^-27 to 1.1 ×10^-27eV·cm⁴.As for themeasuring methods,the effect of boundary layer of space charge region on the mea-sured results of the field dependence on thermal emission rate has been considered forthe first time and a revised method was suggesled.更多还原