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反应离子束刻蚀及其应用
Reactive Ion Beam Etching and Its Application
【摘要】 本文对反应离子束刻蚀及掩模转换技术作了研究,结果表明反应气体O2或CF4压力变化对 Au、Cr、Si、SiO2、Al等各种材料的刻蚀率影响是不同的,金和铬的刻蚀率之比可达16,金和铝的刻蚀率之比可达8.8.因此,反应离子束刻蚀和掩模转换技术已用来制造高深宽比的、精细的x射线金掩模图形.
【Abstract】 Reactive ion beam etching and mask transfer technique were investigated.Resultsshowed that pressure changes of the reactive gas O2 or CF4 have a different effect onthe etching rate of such materials as Au,Cr,Si,SiO2, Al etc.The ratio of the etchingrate between gold and chromium can reach a value of 16,while it can reach 8.8 betweengold and aluminium.Therefore,high precision gold X-ray mask patterns with highdepth-to-width ratio have been fabricated by reactive ion beam etching and masktransfer technique.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年01期
- 【被引频次】4
- 【下载频次】226