【摘要】 用液相外延生长了不同x值0.2-0.8的P型和N型AlxGa_1-xAs.用X光能谱法测量了厚度10μm范围内的Al组分分布.发现在厚度为5μm以内Al组分基本上是均匀的,而在5μm以外随着厚度的增加对于高Al样品x值是增高的,而对于较低Al组分样品x值降低.用EBIC方法测量了电子和空穴的扩散长度.得到在掺杂杂质浓度相同的条件下电子的扩散长度随Al组分x值的增加而减小.空穴的扩散长度则不随Al组分的变化而变化.更多还原

【Abstract】 The distribution of Al composition in P and N type Al_xGa_1-xAs grown by LPEand having different values of x （0.2-0.8） has been measured by X-ray energy spec-troscopy to a depth of 10 μm from the interface.It has been found that the Al composi-tion up to a depth of 5μm from interface is almost uniform but that after 5μm,x in-creases with the increasing thickness for high Al composition,while it decreases for lowAl composition.The diffusion lengths of electrons and holes （L_n,L_p）,measured byEBIC method,have shown that L_n decreases with the increasing Al composition,butthat L_p is constant for all values of x.更多还原