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9微来红外吸收法测定硅单晶中氧含量的标定曲线

A Calibration Curve for Measuring Oxygen Content in Single Crystal Silicon by 9μm Infrared Absorption Method

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【作者】 李月珍; 何焕南; 赵关弟; 严荣华; 吕庆仁; 祁明维; 章家鼎; 华芝芬;

【Author】 Li Yuezhen/Shanghai Institute of Metallurgy, Academia SinicaHe Huannan/Shanghai Institute of Metallurgy, Academia SinicaZhao Guandi/Shanghai Institute of Metallurgy, Academia SinicaYan Ronghua/Shanghai Institute of Metallurgy, Academia SinicaLu Qingren/Shanghai Institute of Metallurgy, Academia SinicaQi Mingwei/Shanghai Institute of Metallurgy, Academia SinicaZhang Jiading/Shanghai Institute of Metallurgy, Academia SinicaHua Zhifen/Shanghai Institute of Metallurgy, Academia Sinica

【机构】 中国科学院上海冶金研究所; 中国科学院上海原子核研究所; 中国科学院上海原子核研究所;

【摘要】 本文用氦载气熔化-气相色谱建立了红外吸收法测定硅单晶中间隙氧的标定曲线.由于熔化法中实验条件的控制和试样准备的改进,降低了空白,提高了数据的重现性,做出较可靠的标定曲线(其换算常数为6.2ppmA/cm-1).优于文献中其它的标定曲线.

【Abstract】 A calibration curve for measuring interstitial oxygen content in single crystal sili-con at room temperature using infrared absorption method has been established by Hecarrier gas fusion-gas chromatography method.Owing to the control of experimentalconditions and improvements on the preparation of specimen,the blank of gas analysishas been lowered and the reproducibility of the results has been improved.We haveobtained a more reliable calibration curve (the calibration constant is 6.2 ppmA/cm-1)which is better than those published in the literature.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年01期
  • 【被引频次】4
  • 【下载频次】43
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