【摘要】 本文研究了电子辐照和退火对Al-SiO₂-Si（n）系统的影响.结果表明,经电子辐照加适当退火处理的样品与未经辐照的样品相比,体内非平衡少数载流子复合寿命明显降低,但表层产生寿命却有所增加,而且平带电压、界面态密度和表面产生速度都略有降低.更多还原

【Abstract】 The effect of 1.3 MeV electron radiation on Al-SiO₂-Si（n） system has been observed.The results show that,after electron irradiation and proper annealing, the bulk lifetimedecreases significantly,while the generation lifetime near the surface increases andthe flat band voltage,surface state density and surface generation velocity decrease.更多还原