节点文献
离子注入硅片的CWCO2激光退火固相外延模型
A Solid-Phase Epitaxy Model for CW CO2-Laser Annealing of Ion-Implanted Silicon
【摘要】 本文把部份线性化和隐格式方法运用于数值求解非线性非齐次热传导方程,得到相应的差分方程,从而把数值求解热传导方程从目前所能计算的ns级Q开关脉冲激光退火过程推广到 ms级以上的 CW CO2激光退火过程.在计算中,提出了近似计算径向热传导散热的准静态模型,井考虑了硅的热传导率和吸收系数随温度的变化.计算获得了各退火参数间的一系列关系.对于再结晶厚度和激光扫描速度间的关系,理论计算和实验结果基本相符.
【Abstract】 The nonlinear equation of heat conduction can be numerically solved by a partiallinearization method to obtain the corresponding difference equations in implicit form,thus overcoming the difficulties in the numerical calculation conventionally used in thefields of laser annealing.The method can be used not only for Q-switched laser anneal-ing but also in the case of CW CO2 laser annealing with the irradiation duration in theorder of millisecond.The temperature dependence of the thermal conductivity and theabsorption coefficient is also considered in the calculations.Moreover,a quasi-staticphysical model in radial power dissipations through conduction is proposed.It resultsin a series of relationship between the annealing parameters.The relationship betweenthe thickness of regrowth region and the laser scanning speed calculated theoretically isin good agreement with the experimental data.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1983年01期
- 【被引频次】6
- 【下载频次】36