【摘要】 本文用φ550 AES和 ESCA能谱仪与离子溅射相结合方法,研究阳极和SiO₂氧化膜与n型<100>晶向InGaAsP界面区的组分和各种氧化物的剖面分布.测量了氧化膜的参数.实验结果表明:采用合适的化学腐蚀和阳极氧化条件,可获得绝缘性较好及界面晶体缺陷和界面态密度较少的氧化膜.但在未经化学腐蚀的样品中组分及各种氧化物的深度分布是不均匀的,井可分为四个层.还给出不同层中 GaLMM,As3d,In3d和 P2p的结合能值,其中Ⅲ 族元素的母体效应比较显著.同样也可得到InGaAsP上SiO₂氧化膜的绝大部分区域是纯SiO₂,而化学腐蚀只能减少过渡区宽度和增大界面陡度,但在过渡区内仍存在Ga₂O₃,In₂O₃ 和P₂O₃.更多还原

【Abstract】 The composition and compositional profiles of anodie and thermal oxidizedfilms/InGaAsP interface region are investigated by using φ550 Auger/ESCA systemin combination with ion sputtering.The parameters of oxidized films are measured.Experimetal results show that if chemical etching and oxidation conditions are suitable,it is possible to obtain oxidized films with better insulation,lower interface lattice de-fects and lower interface state density.However,in the ease of samples not chemicallyetched,the composition and the depth distribution of different oxides are not uniform.These films are noted to be consisted of four layers.The binding energies of GaLMM,In3d and P2p in these layers are given and it is observed that among them the matrixeffect of Ⅲ element is obvious.The results also show that most of the regions of thermaloxidized films on InGaAsP are pure SiO₂ and that chemical etching can only reducethe thickness of the transition region and increase the interface gradient whileGa₂O₃, In₂O₃ and P₂O₅ are still present.更多还原