【摘要】 本文分析了影响高掺杂半导体中杂质势能涨落大小的因素.建立了较简便的自治计算近似方法.计算了不同补偿度下的势能涨落均方差及Halperin-Lax带尾,得到随补偿程度增加势能涨落和带尾迅速变大的结论.研究了注入水平和较深受主能级对势能涨落的影响,得到注入将使带尾变小而较深受主能级将会加大带尾的结论.更多还原

【Abstract】 The factors influencing the fluctuation of impurity potential energy in heavilydoped semiconductors have been analysed.A simple approximate method for a selfcon-sistent calculation has been proposed.The rms potential energy fluctuation and theHalperin-Lax bandtail have been calculated for samples of various degrees of com-pensation.It has been found that the potential energy fluctuation and the size of thebandtail increase rapidly with the degree of compensation.The influences of injectionlevel and deeper acceptors on potential energy fluctuation have been analysed, and itis found that the injection will reduce the size of the bandtail,whereas the deeperacceptors will make it bigger.更多还原