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直拉法生长的硅单晶中碳氧平衡

THE EQUILIBRIUM OF OXYGEN AND CARBON IN CZOCHRALSKI SILICON SINGLE CRYSTALS

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【作者】 梁连科樊占国

【Author】 Liang Lianke, Fan Zhanguo Northeast Institute of Technology

【机构】 东北工学院东北工学院

【摘要】 硅中碳和氧是重要的非金属杂质,它们对硅单晶的性质有着重要影响。硅中碳、氧浓度关系引起了国内外的重视。本文利用已有的研究成果,从物理化学的角度,进一步提出了硅中碳氧平衡模型,用实验证实了这一平衡的存在,并为降低和控制硅中碳、氧含量进行了实验研究。

【Abstract】 Oxygen and carbon are important nonmetallic impurities in silicon crystals. Notably, the characteristics of silicon crystal are affected by them. The relation between oxygen and carbon content has already been noticed both in home and abroad. From the viewpoint of physical chemistry, using existing data, in this report a model of equilibrium between oxygen and carbon in silicon is suggested. We have proven the existence of this equilibrium experimentally, and research was carried out on decreasing or controlling oxygen and carbon content of Czochralski silicon single crystals.

  • 【文献出处】 稀有金属 ,Chinese Journal of Rare Metals , 编辑部邮箱 ,1982年01期
  • 【下载频次】68
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