【摘要】 结合剥层技术,对略高于临界剂量的P⁺注入p-Si层,进行了电解液电场调制反射（以下简称EER）光谱研究,对非均匀的结构无序材料的光学测量,提出采用“特效波长”的建议,硅的这一波长是E₁,E₁+△₁能区的349OA（hω≈3.55eV）,c-Si和α-Si对3490A光波的吸收系数均等于10⁶cm^-1,将（△R/R）₃.55ev按深度x的分布同无序度的分布D（x）作了对比,并从中得到不同无序区内△R/R与D的特征关系,关于损伤区的△R/R（D）,所得结果同已见报道的GaAs注入层一致,利用离子注入层的仅仅一个样品,通过剥层,实现了在宽广范围内无序度对光谱影响的观察,观察在E-1,E-1十△₁能区（3.4eV结构）进行,同Ge的真空蒸发膜的情况作了比较,并对此结构的点阵互作用根源作出一些初步的实验结论,本文证实EER是研究离子注入层的高灵敏度技术。更多还原

【Abstract】 A phosphorus implanted p-Si layer with dose slightly higher than its critical value was studied by EER combined with stripping-etching technique. The concept of a certain optimal wavelength, named "Specially Effective Wavelength" (SEW), is introduced for the optical measurements of structurally disordered materials. At SEW, the absorption coefficients of a material with different degree of disorder, from crystalline to amorphous, are all equal. For Si, the SEW is approximately 3490 A, i. e. hw ~ 3.55 eV (in the E1, E2 + △/1 region), and the corresponding absorption coefficient is 106cm-1 independent of its degree of disorder. The depth profile of (△R/R)3.55ev is related to that of disorder degree, and the characteristic relations △R/R(D) were obtained for all of the three depth regions. The resulting curve for the implant-damaged region is similar to that reported by Anderson et al. for GaAs layers implanted with inert elements ions. By use of stripping, the observation of the disorder degree dependence of the 3.4 eV structure lineshapes has been realized in a wide range with only one sample. A comparison is made with the lineshape features of vacuum evaporated Ge films. Some conclusions have been drawn from these measurements about the mixed lattice interaction origin of the 3.4 eV spectral region of silion. It has been confirmed that EER is a powerful technique with extremely high sensitivity for the investigation of ion implanted semiconductor layers.更多还原