【摘要】 用霍尔系数——电阻率测量、少子寿命测量和深能級瞬态谱(DLTS)测量研究了中子掺杂氢气氛区熔单晶硅的电学性能和輻照缺陷的高溫退火行为。给出了自由载流子浓度和迁移率的等时退火曲綫和DLTS等时退火譜,計算了DLTS譜峯相应的缺陷能級、俘获截面和浓度。初步结果表明,由于氢的存在,这种NTD Si退火时有一些显著特点,如P→N轉型温度低,自由载流子浓度和迁移率回复溫度較低,在～450℃时存在着浓度很大的过量施主和DLTS缺陷。結果还表明,DLTS缺陷的退火行为与寿命和迁移率的变化间有較好的对应性,800—850℃,1小时退火能够基本消除这种NTD Si中的輻照缺陷,使电学性能回复。更多还原

【Abstract】 Elnectrical properties and radiation defect annealing behavior of NTD Si grown by floating zone method in hydrogen atmosphere were studied by Hall coefficient-resistivity measurements, minority carrier lifetime measurements and deep level transient spectroscopy （DLTS）. The neutron doping was performed at temperature～30℃ and～200℃ separately in our swimming pool type research reactor,the Cd-ratio is～10. The concentration of transmuted ⁸¹p is～6x10¹³ atoms cm^-3. One hour isochronal annealing from 400℃ to 1200℃ was carried out in a quartz-tube furnace with high pure nitrogen atmosphere. In this paper the isochronal annealing results of free carrier conceutration, mobility and DLTS measurements were given, and, the energy level, capture section and concetration of deep level defects remaining were calculated. Preliminary experimental results indicate that because of existence of hydrogen this NTD Si exhibits some obvious characters. For example, the temperature of P→N type transformation and recovery temperature of carrier concentration and mobility is lower than those of the samples grown in argon atmosphere. After annealing at～450℃ an excess donor concentration and a high concentration of DLTS defects have been observed. At higher doping temperature the concentrations of above mentioned donor and DLTS defects are higher, and, the mobility and minority carrier lifetime are lower than those at lower temperature. The isochronal annealing curves of free carrier concentration and mobility have a greater waving when annealing temperatare is lower than 850℃. The results also indicate that annealing behavior of deep level defects has a good agreement with the changes of lifetime and carrier mobility. It is pointed out that after annealing for one hour at 800～850℃ the radiation defects in this NTD Si can be removed, electrical properties can be recovered. The experimental results have been discussed briefly.更多还原