【摘要】 本文用雪崩热电子注入技术与MOS C-V技术,研究了软X射线辐照引入于SiO₂中的中性陷阱的性质.给出陷阱俘获截面σ为10^-15～10^-16cm²,有效陷阱密度为10¹¹～10¹²cm^-2.发现陷阱密度随辐照时间的增加而升高,但很快趋于饱和;陷阱密度并随辐照强度的提高而增大.文中研究了室温及77°K下中性陷阱的俘获特性以及陷阱的解陷作用.还给出了陷阱的退火实验结果.更多还原

【Abstract】 This Paper studies the properties of neutral traps in soft X-ray beam irradiated SiO2 with the avalanche hot electron injection and MOS C-V techniques. Observed electron-capture cross sections σ and the effective trap densities Nerr are 10-15-10-16 cm2 and 10~11-10~12 cm-2, respectively; the latter increases with the rise of the irradiated time, but tends to saturation. The characteristics of trapping and detrap-ping at room temperature and 77°K are discussed, and the results of trap annealing are also given.更多还原