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氦载气熔化-气相色谱法测定硅中微量氧

Determination of Micro Amounts of Oxygen in Silicon by Helium Gas Fusion-Gas Chromatography

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【作者】 何焕南赵关弟严荣华吕庆仁

【Author】 He Huannan Zhao Guandi Yah Ronghua Lü Qingren (Shanghai Institute of Metallurgy, Academia Sinica)

【机构】 中国科学院上海冶金研究所中国科学院上海冶金研究所

【摘要】 本文提出了氦载气熔化-气相色谱法(镍-锡熔池方案)测定硅中微量氧。采用镍-锡熔池时硅中定氧的温度可低于与碳直接接触的空坩埚无浴法。由于改进了实验条件和使用了小型裸体石墨坩埚,降低了气体分析的空白(<0.1μg氧),并提高了分析结果的重现性。分析温度1650~1700℃,抽取时间5分钟,每个坩埚可以分析4个样品。用此法可测定ppm级硅中氧。用本法建立了9μ红外吸收法测定硅单晶中氧标定曲线。

【Abstract】 With a nickel-tin bath for dissolving metals in a heated graphite crucible, the determination of oxygen can be operated at lower temperatures(1650-1700℃)than in an empty crucible in which the sample is subject to contact with carbon directly. Four samples are permitted to analyze in a crucible with relatively short time of oxygen extraction (5minutes).Owing to the control of experimental conditions, and the application of water cooled quartz tube and a bare graphite crucible in small size, the blank of the gas analysis is lowered (<0.1μg of oxygen), and the reproducibility of the results is improved. By this method oxygen can be determined at ppm levels.

  • 【文献出处】 分析化学 ,Chinese Journal of Analytical Chemistry , 编辑部邮箱 ,1982年10期
  • 【被引频次】1
  • 【下载频次】20
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