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GaP台面腐蚀研究

THE RESEARCH OF MESA ETCH FOR GaP

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【作者】 丁祖昌吴国贤华伟民曹光胜

【Author】 Ding Zn-chang Wu Guo-xinan Hua Wei-min Cap Guang-sheng(Physics Department,Zhejiang Universlty)

【机构】 浙江大学物理系浙江大学物理系

【摘要】 高效GaP绿色发光二极管制造中,器件的隔离和台面制作具有十分重要意义。本文介绍了用于GaP发光器件的隔离和台面制作的碱性铁氰化钾化学腐蚀技术。观察了腐蚀温度,腐蚀时间对腐蚀深度和表面形貌间关系。结果表明:碱性铁氰化钾对GaP台面腐蚀是一种优良的腐蚀剂,具有较高的腐蚀速率(2微米/分),并可获得光滑无凹坑或少凹坑的腐蚀面。对出现的实验现象从机理上作了解释。

【Abstract】 In the fabrication of high efficiency green LED,the isolation and mesa formation have particular significance.In this work we have studied the chemical etching technique and mesa formation with alkaline K3Fe(CN)6 etchant which provides higher etching rate and a perfect surface is excellent for GaP. For GaP material and have examined the dependence of etching depth and appearance on etching time and etching temperature.We have found that the alkaline K3Fe(CN)6 etchant which providss higher etching rate and a perfect surface is excellent for GaP,

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