【摘要】 观察了一系列Ⅲ—Ⅴ族化合物半导体合金GaAs_1-xPx和Al_xGa₁-_xAs样品的电解液电场调制反射光谱（EER）与合金组分参数X的关系。在临界点能量及其相关的自旋“轨道分裂Eg0,△0,Eg1,△1的计算中,采用了”三点调整法”。按照文献给出的公式,从Eg0的值求得所有GaAs₁-_xPx样品的组分。由此,通过最佳拟合法碍到[Eg0+△0]（x）、Eg1（x）、（Eg1+△1）（x）的经验公式均为抛物线型的。在GaP（X=1）的情形中,明确地测得△1的值约为0.19eV,这与△1:△0比值的“2/3规则”有显著的偏离。本文还说明了,对半导体合金组分的光电压法测定中常用的线性型Eg0（x）假设,有必要进行二次项修正。更多还原

【Abstract】 The composition parameter x dependences of electrolyte electro-reflectance (EER) spectra were observed on a series of Ⅲ-Ⅴ group compound semiconductor alloy samples of GaAs1-xpx and AlxCa1-xAs."Three-point adjusting method"was adopted in the estimation-of critical point energies and its allied spin-orbit splittings EZo, △o, Eg1, △1. From the values of Ego,compositions of all GaAs1-xPx samples were obtained according to a formula given in Ref [9] . Then, empirical formula of parabolic type for all of the energies [Ego+△o] (x), Eg1(x), [Eg1+△1] (x) were achieved by a best fit procedure, In the circumstances of GaP(x=1 ), a value of △1 about 0.16eV was definitely measured. deviating appreciably from"2/3 rule" for the ratio of △a1:△0.The necessity of applying a quabra-tic term correction to the linear type assumption of Ego(x), conventionally used in photovoltaic determination of the semiconductor alloy compositions,has been demonstrated.更多还原