【摘要】 <正> 随着光纤通信系统的发展,长波(1.1—1.7μm)光源的研究巳广泛引起重视。因为在这一波长范围内,石英光纤具有低的传输损耗和材料色散。文献[1]指出,用InGaAsP/InP发光二极管(λ=1.3μm)作光源的系统的传输容量比目前常见的用GaAlAs/GaAs发光更多还原

【Abstract】 InGaAsP/InP double heterostructure material was grown by liquid phase epitaxial technique and "Burrus type" light emitting diodes were made from it. The output power is 1 m W at 100mA driving current. The emission wavelength is 1.3 μm and the operating time has reached 3 × 103 hours.The I-V, I-P charaeteristics and the emission spectrum of the light emitting diodes are discussed. And it is pointed out that the structure of the device and the fabriea-tion technique do have influence upon the characteristics of the light emitting diodes, and the emission spectra of certain light emitting diodes have two peaks, it is due to the p-n junction displacement.更多还原