【摘要】 用DLTS方法研究了在氮气氛下径850℃退火的中子嬗变掺杂硅,发现存在三个深中心,它们在禁带中的位置E_C—E_T为0.20,0.23,和0.49eV。他们可能分别是中照损伤与淬火引进缺陷的复合体、激化杂质及中照损伤与激化杂质的复合体。更多还原

【Abstract】 Neutron transmutation doped silicon was studied with DLTS. After annealing in nitrogen at 850℃, three deep levels were found in the gap locating at 0.2eV, 0.23eV, 0.49eV respectively below the conduction band. It is suggested that they are related to the complex consisted of neutron irradiation damage and quenched-in defects, excited impurities, the complex of excited impurities and defects of neutron irradiation, respectively.更多还原