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UHF应用的低噪声GaAs双栅场效应晶体管

Low Noise GaAs Dual-Gate MES FET for UHF Applications

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【Author】 Wang Weiyuan/Shanghai Institute of Metallurgy, Academia SinicaXia Guanqun/Shanghai Institute of Metallurgy, Academia SinicaLu Jianguo/Shanghai Institute of Metallurgy, Academia SinicaZhan Qianbao/Shanghai Institute of Metallurgy, Academia SinicaYang Xinmin/Shanghai Institute of Metallurgy, Academia SinicaWang Wenqi/Shanghai Institute of Metallurgy, Academia Sinica

【机构】中国科学院上海冶金研究所；上海科技大学分部；

【摘要】本文报告的 UHF应用的低噪声 GaAs双栅金属肖特基势垒接触场效应晶体管,用 GaAs高阻衬底-n汽相外延材料,金属铝栅 1.5 ×300μm.器件封装用简化的环氧树脂粘结的陶瓷管壳.器件的工作参数为V（DS）～4V,V_g₁s～-2V,V_g₂s～0V,此时I_DS～6mA 1GHz 下NFmin 1.2dB（最佳0.8dB）,G_a10dB,G_R45dB.场效应晶体管在UHF电视机和步话机上初步应用,性能良好.更多还原

【Abstract】 Using VPE wafers of SI substrate-buffer-n structure,we have designed and fabri-cated a low noise GaAs dual-gate MES FET for UHF applieations.Aluminium gatesof 1.5×300μm were used.The FET was packaged in a simple ceramic disk bondedby epoxy resin.Under the bias conditions of V_DS～4V,V_g₁s～-2V,V_g₂s～OV andI_DS～6mA,a minimum noise figure NF_min as low as 0.8 dB and the associated powergain G_a of 10 dB were obtained at a frequency of 1 GHz.更多还原

【关键词】场效应晶体管； UHF；器件封装；肖特基势垒；汽相外延； MESFET；高阻；栅长；有源层；双极晶体管；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1982年06期

【被引频次】1
【下载频次】34

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