【摘要】 测量了液相外延生长的GaAs-Al_xGa_1-xAs n -N异质结 300K和 77K下的光伏响应的光谱分布,证明异质结界面上存在着较多的界面能级.能带形状在界面上有两个背对背的势垒.在禁带中离AlxGa_1-xAs导带边 0.7-0.8eV处有一个类受主界面能级.在某些特定条件下,这种n-N异质结在光照和温度作用下可具有多态变化,它和界面态上电子的捕获和释放有关.更多还原

【Abstract】 The Photovoltaie response of LPE GaAs-Al_x Ga_1-xAs n-N Heterojunction has beenmeasured at 300 K and 77 K.It is shown that many interface energy states exist at theheterojunction interface.The energy diagram at the interface has two back-to-backpotential barriers.There is an acceptor-lile interface state in the forbid-den energy gap of Al_xGa_1-xAs at about 0.7-0.8 eV below the edge of the conductionband.In certain circumstances the barrier of the n-N heterojunction can bechanged from one type to another under the action of illumination and change oftemperature.This effect is related to the eapture and release of electrons at theinterface states.更多还原