【摘要】 借助玻尔兹曼输运方程和双温度电子转移模型分析了GaAs中的速度过冲特性,获得了与Monte Carlo计算机模拟一致的结果.利用曲线拟合技术给出了电子漂移速度、电子温度与渡越距离的简单关系式.更多还原

【Abstract】 An analysis of velocity overshoot effect in GaAs has been developed by means ofthe Boltzmann transport equations and the two-temperature electron transfer model.The results are in good agreement with the results of the Monte Carlo Technique.Therelations between the drift velocity and temperature of electrons and the transit dis-tance of electrons have been given by the method of curve fitting.更多还原