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低压化学汽相淀积氮化硅膜的成份和抗氧化能力的测定
Determination of Composition and Oxidation Resistance for the Silicon Nitride Films Prepared by Low Pressure Chemical Vapor Deposition Technique
【摘要】 本文介绍用低压化学汽相淀积(LPCVD)技术生长的氮化硅膜的组份及其抗氧化能力的测定.我们研究了SiCl4-NH3体系淀积的氮化硅膜.采用俄歇电子能谱仪(AES)和二次离子质谱仪(SIMS)测定膜的组份比和膜中的氧含量,特别是用(AES)法详细分析了氮化硅膜的抗氧化能力.
【Abstract】 The composition and oxidation resistance of silicon nitride films prepared by lowpressure chemical vapor deposition technique (LPCVD) are determined.The Si3N4films deposited in the SiCl4-NH3 system are studied.The composition ratio and oxygencontent in the films are measured by Auger Electron Spectroscopy (AES) and Secon-dary Ion Mass-Spectroscopy (SIMS).The oxidation resistance of the Si3N4 films isespecially analyzed by AES in detail.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1982年05期
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