【摘要】 介绍了向{100}和向最近的{110}偏离2～4°的赝(111)晶片外延图形微畸变的研究结果.当参考面为(100)时,图形平行于参考边[112]安排,若晶片向(110)或(001)偏离2～4°,则垂直于参考边的线条明显变宽,当晶片向(011)或(101)偏离2～4°,图形畸变最小.更多还原

【Abstract】 In case the reference side of (111) wafer is [112] direction,and the referenceplane is (110),if the wafer is 2-4°off (111) towards (110) or (001),the lines nor-mal to the reference,side in the figure broaden asymmetrically.If it is 2-4°off(111) toward (011) or (101) the micro-distortion then reaches its minimal.更多还原