【摘要】 用X射线衍射貌相术研究了硅单晶中孪生界面区域的结构和缺陷.观察表明,除存在由完整的同一原子平面组成的孪生界面外,我们还发现存在位错和/或层错的不完整的孪生界面,经测定其中的位错是 b=1/6<112>的 Shockley 不全位错,而层错矢量垂直于孪生面,R=±1/3<111>.除描述台阶状孪生界面结构外,我们还提出一种孪生-层错模型,并借以解释所观察到的一些实验现象.更多还原

【Abstract】 The structure of twin interface region in a silicon single crystal and the defectsexisting in it have been investigated by means of X-ray topography.Imperfect twin in-terface with dislocations and /or stacking faults,in addition to the twin interfacecomposed by a perfect atomic plane, was observed. The dislocations have been deter-mined to be Shockley partial dislocations with Burgers vector b=1/6 <112>. The faultvector R=±1/3 <111>is perpendicular to the twinning plane. A step structure oftwin interface has been described. Besides,a twin-fault model has been proposed to ex-plain the experimental phenomena observed.更多还原