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硅(111)面2×1重构表面和硅(100)面的电子态密度的模型计算

Electronic States of a 2×1 Reconstructed Si(111) Surface and of an Ideal Si(100) Surface

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【作者】 傅卓式;

【Author】 Fu Zhuowu/Department of Physics, Fudan University

【机构】 复旦大学物理系;

【摘要】 本文采用一种简单的模型,应用传递矩阵的格林函数方法,计算了Si(111)2×1重构表面以及Si(100)面的电子态密度.计算结果表明,在合理地作出一些假定后,本文和其它比较繁复的计算方法所得到的结果,在定性上是符合的.

【Abstract】 The electronic structures of a 2×1 reconstructed Si(111) surface and of an idealSi (100) surface are studied with the "Transfer-Matrix Green Function" method (TMG)proposed by L. M. Falicov and F. Yndurain.The calculation is based on a simple modelonly and the results obtained are in fair agreement with that from other more sophis-ticated and time-consuming methods.Some problems about the selection of parametersare also discussed.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1982年04期
  • 【被引频次】2
  • 【下载频次】221
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