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偏离<111>晶向的硅表面层中氧化层错的研究

Study of Stacking Faults in Silicon with Crystal Orientation Deviated from <111>

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【作者】 鲍希茂嵇福权黄信凡

【Author】 Bao Ximao/Nanjing UniversityJi Fuquan/Nanjing UniversityHuang Xinfan/Nanjing University

【机构】 南京大学物理系南京大学物理系

【摘要】 本文用样品表面对(111)晶面的小角度偏离解释了高温退火和热氧化过程中出现的弧形和弓形OSF,分析了它们的形貌特征,并确定了弧形OSF的成核位置.讨论了表面弓形OSF的宽长比.发现随着长度的增长,弓形 OSF的宽长比从 1/2逐渐变为与长度成反比例.

【Abstract】 The arched OSF and bow-shaped OSF,formed during annealing or thermal oxida-tion,are explained in terms of the deviation of the specimen surface from (111) plane.The topography character of these OSF in analyzed.According to the topo-graphy character,the position of nucleation center of arched OSF can be determinedand the width-length ratio of surface type bow-shaped OSF can be measured simply.It is found that the width-length ratio of OSF decreases gradually and then becomesinversely proportional to the length of OSF as the length increases.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1982年03期
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