【摘要】 本文指出由MOS结构栅电流和高频电容对线性电压扫描的瞬态响应,可同时测定产生寿命和表面产生速度.对一些样品进行了测试,并与饱和电容法和 dC/dV法作了比较.更多还原

【Abstract】 It has been shown that the generation lifetime and surface generation velocity canbe determined simultaneously through the gate current and high frequency capacitancetransient responses of a MOS structure to a linear voltage sweep.Measurements havebeen made by applying this method on several samples,and a comparison has been donewith those taken by saturation capacitance method and by dC/dV method.更多还原