【摘要】 研究了高纯度LPE-GaAs和VPE-GaAs 在4.2K的光致发光谱.观测到1.44—1.46eV范围内有若干发射峰,它们是残留受主的BA、DA峰的一级声子伴线.由光致发光谱测定了GaAs中纵光学声子能量约为36meV.用一级声子线强度与零级声子线强度之比值定出了C_As、Si_As和Ge_As的s值.实验结果表明在高纯度GaAs中,对于同一种受主杂质,BA峰的s值大于DA峰的s值.更多还原

【Abstract】 The photoluminescence spectra of high purity LPE-and VPE-GaAs have been in-vestigated at 4.2 K.Some peaks in the range 1.44-1.46 eV are observed and attributedto first phonon replicas of BA and DA bands associated with residual aeceptors.Theenergy of longitudinal optical （LO） phonon in GaAs is about 36 meV determined bythe photolumineseence spectra.The s values for C_As, Si_As, and Ge_As are obtained bytaking the ratio of intensity of the first phonon peak to the zero phonon peak respec-tively.The experimental results show that for a certain acceptor the s value for theBA transitron is higher than that for the DA transition in high purity GaAs.更多还原