【摘要】 本文分析了线性电压扫描下MOS电容的C-t瞬态响应,在此基础上,发展了一种快速确定体产生寿命和表面产生速度的新方法.该方法实验手续和计算均较简单,适于在需要确定很多样品的体产生寿命和表面产生速度场合下应用.更多还原

【Abstract】 A new rapid method for determining bulk generation lifetime and surface genera-tion velocity is suggested on the basis of the analysis of a MOS capacitance C-t tran-sient response to a linear voltage sweep.Both the experimental procedure and the cal-culation involved are relatively simple, therefore the method is more suitable for casesin which measurements of lifetime and surface generation velocity of a large numberof samples are necessary.更多还原