【摘要】 测量半导体深中心浓度分布和测量浅杂质浓度分布一样,是一个十分重要的问题.本文提出用C-V 法同时确定半导体中深中心和浅杂质浓度分布的方法,在深中心浓度和浅杂质浓度可比的情况下,它的结果尤为精确.文中讨论了测试原理和测试方法并以掺金硅N~+-P结二极管和汽相外延N型砷化镓肖脱基二极管为例进行了测量.更多还原

【Abstract】 The measurement of the profile of deep levels in semiconductors as well as that ofthe profile of shallow impurities, is a problem of great importance.We suggest aprocedure for measuring simultaneously the profile of deep levels and shallow impuri-ties with C-V method.The results are especially accurate when the density of the deeplevels is comparable with that of shallow impurities. The principle and method ofmeasurement is presented and we give results of measurements on an N~+-P junctionof gold-doped silicon and on a Schottky barrier of VPE N-type GaAs.更多还原